JPH0441504B2 - - Google Patents
Info
- Publication number
- JPH0441504B2 JPH0441504B2 JP58052915A JP5291583A JPH0441504B2 JP H0441504 B2 JPH0441504 B2 JP H0441504B2 JP 58052915 A JP58052915 A JP 58052915A JP 5291583 A JP5291583 A JP 5291583A JP H0441504 B2 JPH0441504 B2 JP H0441504B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- line
- conductivity type
- integrated circuit
- supply line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 230000000087 stabilizing effect Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000000872 buffer Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052915A JPS59178763A (ja) | 1983-03-29 | 1983-03-29 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052915A JPS59178763A (ja) | 1983-03-29 | 1983-03-29 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59178763A JPS59178763A (ja) | 1984-10-11 |
| JPH0441504B2 true JPH0441504B2 (en]) | 1992-07-08 |
Family
ID=12928121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58052915A Granted JPS59178763A (ja) | 1983-03-29 | 1983-03-29 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59178763A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2869791B2 (ja) * | 1988-08-31 | 1999-03-10 | 株式会社日立製作所 | 半導体集積回路装置およびそれを応用した電子装置 |
| JP2778062B2 (ja) * | 1988-11-25 | 1998-07-23 | 日本電気株式会社 | バッファ回路 |
-
1983
- 1983-03-29 JP JP58052915A patent/JPS59178763A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59178763A (ja) | 1984-10-11 |
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